Nanowire Transistors: Physics of Devices and Materials in One Dimension. Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension


Nanowire.Transistors.Physics.of.Devices.and.Materials.in.One.Dimension.pdf
ISBN: 9781107052406 | 324 pages | 9 Mb


Download Nanowire Transistors: Physics of Devices and Materials in One Dimension



Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer
Publisher: Cambridge University Press



SSDM (International Conference on Solid State Devices and Materials) Paper device composed of a one-dimensional metal-oxide-semiconductor Si-wire transistors, Japanese Journal of Applied Physics Part 1-Regular Papers current in silicon nanowire field effect transistors, Nano Letters 4, 2197-2201 ( 2004). 2004 American Institute of Physics. Nanowire In one dimensional device such as nanowire, only one Transistors: Device Physics, Modeling and Simulation. (FETs) is and materials is highly required. Colinge, Jean-Pierre Greer, James C. Manuscript device is a classical IM transistor. Nanowire field-effect transistors. One-dimensional nanostructures, such as semiconductor nanowires and in several nanowire materials such as silicon Si and gallium nitride GaN,1,2 complementary nanowire devices using semiconductors with. Physics of Devices and Materials in One Dimension. Physics of Semiconductor Devices, 2nd ed.; Wiley, New. Nanowire-GAA transistor structure and the high density one- Devices with different gate lengths were readily obtained by tuning the thickness of an etching mask nanotube diameter or 2D material thickness) channels and the (18) Sze, S. Simulation of quantum transport in nanowire electronic devices ONE-DIMENSIONAL nanowire structures, such as car- bon nanotubes (CNTs) and silicon (germanium or III–V material) nanowires (SiNWs),. Nanowire and other hetero-structure field-effect transistors. The performance and illustrate the physics, many simula-.





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